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AlN ceramic substrate, high thermal conductivity, good electrical properties, thermal expansion coefficient close to Si sheet, high strength, high temperature resistance, chemical corrosion resistance, high resistivity, low dielectric loss, non-toxic, is to replace BeO ceramics The ideal material is an ideal large-scale integrated circuit heat dissipation substrate and packaging material.

AlN ceramic substrate is a new generation of high-performance ceramic substrate with high thermal conductivity (theoretical value is 319W/m.K, commercial AlN substrate thermal conductivity is greater than 140W/m.k), low dielectric constant ( 8.8) and dielectric loss (~4×104), and the thermal expansion coefficient (4.4×10-4/℃) matching with silicon, etc., chemical composition AI 65.81%, N 34.19%, specific gravity 3.261g/cm3, white Or off-white, colorless and transparent single crystal, sublimation decomposition temperature under normal pressure is 2450 ℃.

Mainly used in high-density hybrid circuits, microwave power devices, power electronic devices, optoelectronic components, semiconductor refrigeration and other products as high-performance substrate materials and packaging materials, widely used in communication devices, high-brightness LEDs, power electronic devices, etc. industry.